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| PTF 10135 5 Watts, 2.0 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard. Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability Typical Output Power vs. Input Power 8 7 Output Power (Watts) 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 A-1 234 569 953 101 35 VDD = 26 V IDQ = 70 mA f = 2000 MHz Input Power (Watts) Package 20249 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 39 0.22 -40 to +150 4.5 Unit Vdc Vdc C Watts W/C C C/W e 1 PTF 10135 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 5 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 0.8 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz --all phase angles at frequency of test) Symbol Gps P-1dB hD Y Min 11 5 40 -- Typ -- -- -- -- Max -- -- -- 10:1 Units dB Watts % -- Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power & Efficiency 16 15 14 Gain (dB) Efficiency (%) 60 50 40 Broadband Test Fixture Performance Efficiency Return Loss 16 14 Gain (dB) Efficiency (%) 10 8 6 4 1930 60 50 40 Gain (dB) 12 Gain 13 12 11 10 1700 VDD = 26 V IDQ = 70 mA Output Pow er (W) 30 20 10 VDD = 26 V IDQ = 70 mA POUT = 4 W 30 20 Return Loss (dB) 10 0 1990 1800 1900 2000 0 2100 1940 1950 1960 1970 1980 Frequency (MHz) Frequency (MHz) 2 e Output Power vs. Supply Voltage 8 PTF 10135 Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) -10 -20 Output Power (Watts) 7 VDD = 26 V, IDQ = 70 mA f1 = 1999.9 MHz, f2 = 2000.0 MHz 3rd Order 6 IMD (dBc) -30 -40 -50 7th -60 -70 5th 5 IDQ = 70 mA f = 2000 MHz 4 22 24 26 28 30 32 34 0 1 2 3 4 5 6 Supply Voltage (Volts) Output Power (Watts-PEP) Gain vs. Gate Voltage 20 Capacitance vs. Supply Voltage 18 1.2 PIN = 0.05 W 12 8 f = 1.9 4 f = 2.0 GHz 0 2 3 4 5 6 Cds and Cgs (pF) Power Gain (dB) 16 VDD = 26 V 15 12 9 6 3 0 0 10 20 0.6 Cds 0.4 0.2 Crss 30 40 0.0 Gate-Source Voltage (Volts) Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 1.02 Bias Voltage (V) 1.01 1 0.99 0.98 0.97 0.96 -20 30 Temp. (C) 80 130 0.05 0.145 0.24 0.335 0.43 0.525 Voltage normalized to 1.0 V Series show current (A) 3 Crss (pF) Cgs VGS = 0 V f = 1 MHz 1.0 0.8 PTF 10135 Impedance Data VDD = 26 V, POUT = 5 W, IDQ = 70 mA ---> E RA e Z0 = 50 W Z Source Z Load TO R 0 .2 D TOW AR D GEN - WAVELE NGT HS G S 0.0 0.1 0.2 0.3 0.4 Frequency GHz 1.7 1.8 1.9 2.0 2.1 R Z Source W jX -2.9 -4.6 -5.0 -5.3 -6.0 R 8.0 7.0 6.0 5.8 5.7 5.3 3.3 2.8 2.6 2.1 Z Load W jX 3.0 2.5 1.2 0.6 TOW ARD LOAD NG THS 2.1 GHz 1.7 GHz 0.1 2.1 GHz < -- - LE WA VE Z Source 0.2 0 .3 Typical Scattering Parameters (VDS = 26 V, IDQ = 300 mA) f (MHz) 100 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 S11 Mag 0.874 0.889 0.892 0.897 0.903 0.860 0.873 0.873 0.891 0.890 0.904 0.896 0.932 0.932 0.950 0.955 0.959 0.945 0.946 0.949 0.953 0.946 S21 Ang -58 -115.5 -128.2 -138.1 -148.6 -154.5 -159.3 -162.8 -166.9 -169.6 -173.1 -174.7 -177.4 179.2 175.8 171.8 167.4 164.0 160.4 159.3 156.3 155.4 S12 Ang 137 89.0 76.6 66.5 54.4 46.3 39.6 33.4 27.5 22.7 17.1 13.5 8.3 3.6 -1.6 -6.4 -12.0 -16.2 -21.3 -24.5 -29.2 -31.0 4 5 0 .0 -0.6 S22 Ang 46 9.1 1.1 -5.3 -11.1 -14.7 2.4 10.7 42.5 70.3 82.9 87.4 87.3 88.4 87.5 84.4 81.5 78.8 76.6 72.6 69.4 68.6 Mag 24.1 12.707 10.388 8.626 7.283 5.853 4.977 4.262 3.736 3.264 2.911 2.583 2.395 2.155 1.988 1.808 1.656 1.487 1.354 1.250 1.152 1.050 Mag 0.009 0.016 0.015 0.013 0.011 0.008 0.006 0.005 0.004 0.005 0.007 0.010 0.013 0.015 0.018 0.021 0.023 0.026 0.027 0.030 0.032 0.034 Mag 0.770 0.759 0.768 0.798 0.833 0.825 0.837 0.853 0.861 0.863 0.875 0.866 0.896 0.905 0.930 0.944 0.972 0.955 0.963 0.948 0.961 0.931 Ang -35 -73.3 -83.2 -92.6 -103.7 -112.5 -119.4 -126.7 -132.7 -137.9 -143.1 -146.7 -150.4 -155.0 -158.7 -162.9 -167.9 -172.4 -176.8 -180.0 175.9 173.8 05 0.1 Z Load 1.7 GHz e Test Circuit PTF 10135 Block Diagram for f = 1.96 GHz Q1 PTF 10135 0.149 l 1.96 GHz 0.081 l 1.96 GHz 0.073 l 1.96 GHz 0.06 l 1.96 GHz 33 pF 0.7 pF LDMOS RF FET Microstrip 50 W Microstrip 10.4 W Microstrip 15.9 W Microstrip 12.1 W Microstrip 15.9 W Chip Cap Chip Cap C4 C6 C7, C10 C11 L1, L2 R1, R2 R3 R4 Circuit Board 0.3-3.5 pF Variable Capacitor 0.3 pF Chip Cap 0.1 mF Chip Cap 10 mF SMT Tantalum 4 Turn #20 AWG, .120" I.D. 220 W Chip Resistor K1206 2K SMT Potentiometer 10 W Chip Resistor K1206 .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper l1, l2, l7 l3 l4 l5 l6 C1, C3, C8, C9 C2, C5 Parts Layout (not to scale) 5 PTF 10135 e Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10135 Uen Rev. A 11-24-98 6 |
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